Dussaigne, A: search on Z-Library

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1

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

Even, A., Laval, G., Ledoux, O., Ferret, P., Sotta, D., Guiot, E., Levy, F., Robin, I. C., Dussaigne, A.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1015 KB

english, 2017

2

Dynamics of AlGaN based detectors in the deep-UV

G. Mazzeo, J.-L. Reverchon, G. Conte, A. Dussaigne, J.-Y. Duboz

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 526 KB

english, 2008

3

Deep ultraviolet detection dynamics of AlGaN based devices

G. Mazzeo, G. Conte, J. Reverchon, A. Dussaigne, J. Duboz

Year:

2006

Language:

english

File:

PDF, 362 KB

english, 2006

4

Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

Dussaigne, A., Barbier, F., Samuel, B., Even, A., Templier, R., Lévy, F., Ledoux, O., Rozhavskaia, M., Sotta, D.

Journal:

Journal of Crystal Growth

Year:

2020

Language:

english

File:

PDF, 1.75 MB

english, 2020

5

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

6

AlGaN-Based Linear Array for UV Solar-Blind Imaging From 240 to 280 nm

Mazzeo, G., Reverchon, J.-L., Duboz, J.-Y., Dussaigne, A.

Journal:

IEEE Sensors Journal

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

7

Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]

Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 607 KB

english, 2013

8

Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

Bavencove, A.-L., Gilet, P., Dussaigne, A., Dang, Le Si, Martin, B., Ferret, P., Eymery, J., Durand, C., Lafossas, M., Salomon, D., André, B., Levy, F.

Journal:

Electronics Letters

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

9

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells

Corfdir, P, Lefebvre, P, Dussaigne, A, Balet, L, Sonderegger, S, Zhu, T, Martin, D, Ganière, J-D, Grandjean, N, Deveaud-Plédran, B

Journal:

Microscopy and Microanalysis

Year:

2011

Language:

english

File:

PDF, 1.06 MB

english, 2011

10

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies

Journal:

physica status solidi (b)

Year:

2004

Language:

english

File:

PDF, 822 KB

english, 2004

11

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Kaufmann, Nils A K, Dussaigne, Amélie, Martin, Denis, Valvin, Pierre, Guillet, Thierry, Gil, Bernard, Ivaldi, Francesco, Kret, Slawomir, Grandjean, Nicolas

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.33 MB

english, 2012

12

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Damien Salomon, Amelie Dussaigne, Matthieu Lafossas…

Journal:

Nanoscale Research Letters

Year:

2013

Language:

english

File:

PDF, 877 KB

english, 2013

13

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Corfdir, P., Levrat, J., Dussaigne, A., Lefebvre, P., Teisseyre, H., Grzegory, I., Suski, T., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B.

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 690 KB

english, 2011

14

Effects of the annealing temperature on the structural and electronic properties of MBE grown InGaN/GaN quantum wells

Ivaldi, F, Kaufmann, N A K, Kret, S, Dussaigne, A, Kurowska, B, Klepka, M, Da̧browski, J, Dłużewski, P, Grandjean, N

Journal:

Journal of Physics Conference Series

Year:

2011

Language:

english

File:

PDF, 2.50 MB

english, 2011

15

-plane InGaN/GaN quantum wells

Liu, W., Butté, R., Dussaigne, A., Grandjean, N., Deveaud, B., Jacopin, G.

Journal:

Physical Review B

Year:

2016

Language:

english

File:

PDF, 2.94 MB

english, 2016

16

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Dussaigne, A, Corfdir, P, Levrat, J, Zhu, T, Martin, D, Lefebvre, P, Ganière, J-D, Butté, R, Deveaud-Plédran, B, Grandjean, N, Arroyo, Y, Stadelmann, P

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.34 MB

english, 2011

17

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Corfdir, P., Lefebvre, P., Balet, L., Sonderegger, S., Dussaigne, A., Zhu, T., Martin, D., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 922 KB

english, 2010

18

AlGaN/GaN HEMT on (111) single crystalline diamond

Alomari, M., Dussaigne, A., Martin, D., Grandjean, N., Gaquière, C., Kohn, E.

Journal:

Electronics Letters

Year:

2010

Language:

english

File:

PDF, 197 KB

english, 2010

19

[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nm

Guiot, Eric, Sotta, David, Ledoux, Olivier, Lagrange, Melanie, Lavaitte, Guillaume, Dussaigne, Amelie, Chenot, Sebastien, Damilano, Benjamin

Year:

2019

Language:

english

File:

PDF, 1.13 MB

english, 2019

20

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

F. Demangeot, D. Simeonov, A. Dussaigne, R. Butté, N. Grandjean

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 201 KB

english, 2009

21

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Tchoulfian, P., Donatini, F., Levy, F., Amstatt, B., Dussaigne, A., Ferret, P., Bustarret, E., Pernot, J.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 959 KB

english, 2013

22

GaN rods grown on Si by SAG-HVPE towards GaN HVPE/InGaN MOVPE core/shell structures

Avit, Geoffrey, ANDRE, Yamina, Bougerol, Catherine, Castelluci, Dominique, Dussaigne, Amélie, Ferret, Pierre, Gaugiran, Stephanie, Gayral, Bruno, GIL, Evelyne, Lee, Yann, Ramdani, M. Réda, Roche, Elis

Journal:

Crystal Growth & Design

Year:

2016

Language:

english

File:

PDF, 2.35 MB

english, 2016

23

SPIE Proceedings [SPIE Photonics Europe - Strasbourg, France (Monday 3 April 2006)] Optical Sensing II - Dynamic response of AlGaN based sensors under excimer laser irradiation

Mazzeo, G., Culshaw, Brian, Mignani, Anna G., Reverchon, J-L., Conte, G., Bartelt, Hartmut, Jaroszewicz, Leszek R., Dussaigne, A., Duboz, J-Y.

Year:

2006

Language:

english

File:

PDF, 442 KB

english, 2006

24

Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors

Mrad, Mrad, Licitra, Christophe, Dussaigne, AmÃ©lie, Yon, Victor, Richy, JÃ©rÃ´me, Lafossas, Matthieu, Kanyandekwe, Joel, Feuillet, Guy, Charles, Matthew

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 3.03 MB

2020

25

GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

A. Dussaigne, M. Malinverni, D. Martin, A. Castiglia, N. Grandjean

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 277 KB

english, 2009

26

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Simeonov, D., Dussaigne, A., Butté, R., Grandjean, N.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 176 KB

english, 2008

27

Nonpolar GaN-based microcavity using AlN∕GaN distributed Bragg reflector

Zhu, T., Dussaigne, A., Christmann, G., Pinquier, C., Feltin, E., Martin, D., Butté, R., Grandjean, N.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 421 KB

english, 2008

28

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a -Plane GaN Substrates

Corfdir, Pierre, Dussaigne, Amélie, Teisseyre, Henryk, Suski, Tadeusz, Grzegory, Izabella, Lefebvre, Pierre, Giraud, Etienne, Shahmohammadi, Mehran, Phillips, Richard T., Ganiere, Jean-Daniel, Grandje

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 461 KB

english, 2013

29

Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures

Sonderegger, S, Corfdir, P, Balet, L, Zhu, T, Dussaigne, A, Martin, D, Ristić, J, Lefebvre, P, Ganière, J-D, Grandjean, N, Deveaud-Plédran, B

Journal:

Microscopy and Microanalysis

Year:

2010

Language:

english

File:

PDF, 1.35 MB

english, 2010

30

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

Fedichkin, F., Andreakou, P., Jouault, B., Vladimirova, M., Guillet, T., Brimont, C., Valvin, P., Bretagnon, T., Dussaigne, A., Grandjean, N., Lefebvre, P.

Journal:

Physical Review B

Year:

2015

Language:

english

File:

PDF, 1.72 MB

english, 2015

31

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, N. Grandjean

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 277 KB

english, 2004

32

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Tchoulfian, P., Donatini, F., Levy, F., Dussaigne, A., Ferret, P., Pernot, J.

Journal:

Year:

2014

Language:

english

File:

PDF, 2.71 MB

english, 2014

33

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - Control of the polarity of GaN epilayers using a Mg adsorption layer

Grandjean, N., Talent, M.-L., Dussaigne, A., Vennegues, P., Tournie, E.

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

34

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Corfdir, P., Ristić, J., Lefebvre, P., Zhu, T., Martin, D., Dussaigne, A., Ganière, J. D., Grandjean, N., Deveaud-Plédran, B.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 537 KB

english, 2009

35

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Shahmohammadi, M., Liu, W., Rossbach, G., Lahourcade, L., Dussaigne, A., Bougerol, C., Butté, R., Grandjean, N., Deveaud, B., Jacopin, G.

Journal:

Physical Review B

Year:

2017

Language:

english

File:

PDF, 2.90 MB

english, 2017

36

Monolithic white light emitting diodes with a broad emission spectrum

A. Dussaigne, J. Brault, B. Damilano, J. Massies

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 125 KB

english, 2007

37

Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7âÎ¼m

Sakr, S., Giraud, E., Dussaigne, A., Tchernycheva, M., Grandjean, N., Julien, F. H.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 840 KB

english, 2012

38

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

R. Kudrawiec, M. Gladysiewicz, A. Dussaigne, H. Teisseyre, M. Boćkowski, I. Grzegory, T. Suski, J. Misiewicz, N. Grandjean

Year:

2011

Language:

english

File:

PDF, 547 KB

english, 2011

39

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Corfdir, P., Dussaigne, A., Teisseyre, H., Suski, T., Grzegory, I., Lefebvre, P., Giraud, E., GanieÌre, J.-D., Grandjean, N., Deveaud-PleÌdran, B.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.71 MB

english, 2012

40

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Kalliakos, S., Bretagnon, T., Lefebvre, P., Taliercio, T., Gil, B., Grandjean, N., Damilano, B., Dussaigne, A., Massies, J.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 274 KB

english, 2004

41

SPIE Proceedings [SPIE Optical Systems Design 2005 - Jena, Germany (Monday 12 September 2005)] Detectors and Associated Signal Processing II - Status of AlGaN based focal plane arrays for UV solar blind detection

Reverchon, Jean-Luc, Chatard, Jean-Pierre, Dennis, Peter N. J., Mazzeo, Giovanni, Dussaigne, Amélie, Duboz, Jean-Yves

Year:

2005

Language:

english

File:

PDF, 409 KB

english, 2005

42

Solar blind AlGaN photodetectors with a very high spectral selectivity

Duboz, J.-Y., Grandjean, N., Dussaigne, A., Mosca, M., Reverchon, J.-L., Verly, P. G., Simpson, R. H.

Journal:

The European Physical Journal Applied Physics

Year:

2006

Language:

english

File:

PDF, 152 KB

english, 2006

43

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, J. Massies

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 283 KB

english, 2003

44

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Teisseyre, H., Kamińska, A., Franssen, G., Dussaigne, A., Grandjean, N., Grzegory, I., Łucznik, B., Suski, T.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 733 KB

english, 2009

45

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Quantum Sensing and Nanophotonic Devices VII - Growth of intersubband GaN/AlGaN heterostructures

Dussaigne, A., Razeghi, Manijeh, Sudharsanan, Rengarajan, Nicolay, S., Martin, D., Brown, Gail J., Castiglia, A., Grandjean, N., Nevou, L., Machhadani, H., Tchernycheva, M., Vivien, L., Julien, F. H.,

Year:

2010

Language:

english

File:

PDF, 4.08 MB

english, 2010

46

Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice

Peres, M., Neves, A. J., Monteiro, T., Magalhães, S., Franco, N., Lorenz, K., Alves, E., Damilano, B., Massies, J., Dussaigne, A., Grandjean, N.

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2010

Language:

english

File:

PDF, 1.84 MB

english, 2010

47

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Amichi, Lynda, Mouton, Isabelle, Di Russo, Enrico, Boureau, Victor, Barbier, FrÃ©dÃ©ric, Dussaigne, AmÃ©lie, Grenier, Adeline, Jouneau, Pierre-Henri, Bougerol, Catherine, Cooper, David

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 2.34 MB

2020

48

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - Indium surface segregation in InGaN/GaN quantum wells

Dussaigne, A., Damilano, B., Grandjean, N., Massies, J.

Year:

2002

Language:

english

File:

PDF, 77 KB

english, 2002

49

Radiative lifetime in wurtzite GaN/AlN quantum dots

R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 286 KB

english, 2007

50

-plane GaN/AlGaN quantum wells

Rossbach, G., Levrat, J., Dussaigne, A., Cosendey, G., Glauser, M., Cobet, M., Butté, R., Grandjean, N., Teisseyre, H., Bockowski, M., Grzegory, I., Suski, T.

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 1.53 MB

english, 2011

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